Page overwriting method for performance improvement of NAND flash memories
نویسندگان
چکیده
This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites allowance compared with conventional method.
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عنوان ژورنال:
- IEICE Electronic Express
دوره 10 شماره
صفحات -
تاریخ انتشار 2013